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  savantic semiconductor product specification silicon npn power transistors 2SD2052 d escription with to-3pfa package wide area of safe operation complement to type 2sb1361 applications optimum for the output stage of a hifi audio amplifier pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(tc=25) symbol parameter conditions value unit v cbo collector-base voltage open emitter 150 v v ceo collector-emitter voltage open base 150 v v ebo emitter-base voltage open collector 5 v i c collector current (dc) 9 a i cp collector current (pulse) 15 a t a =25 3 p c collector power dissipation t c =25 100 w t j junction temperature 150  t stg storage temperature -55~150 
savantic semiconductor product specification 2 silicon npn power transistors 2SD2052 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ce (sat) collector-emitter saturation voltage i c =7a; i b =0.7a 2.0 v v be base-emitter on voltage i c =7a;v ce =5v 1.8 v i cbo collector cut-off current v cb =150v; i e =0 50 a i ebo emitter cut-off current v eb =3v; i c =0 50 a h fe-1 dc current gain i c =20ma ; v ce =5v 20 h fe-2 dc current gain i c =1a ; v ce =5v 60 200 h fe-3 dc current gain i c =7a ; v ce =5v 15 f t transition frequency i c =0.5a ; v ce =5v,f=1mhz 20 mhz c ob collector output capacitance f=1mhz; i e =0;v cb =10v 150 pf  h fe-2 classifications q s p 60-120 80-160 100-200
savantic semiconductor product specification 3 silicon npn power transistors 2SD2052 package outline fig.2 outline dimensions (unindicated tolerance:0.30mm)


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